v rrm = 45 v - 100 v i f(av) = 800 a features ? high surge capability heavy three tower package ? electrically isolated base plate ? not esd sensitive parameter symbol mbrta80045(r) mbrta80060(r ) unit repetitive peak reverse voltage v rrm 45 60 v rms reverse voltage v rms 32 42 v silicon power schottk y diode conditions 100 70 mbrta80045 thru MBRTA800100r MBRTA800100(r ) 80 56 mbrta80080(r ) ? isolation type package ? types from 45 v to 100 v v rrm maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) dc blocking voltage v dc 45 60 v operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol mbrta80045(r) mbrta80060(r ) unit average forward current (per pkg) i f(av) 800 800 a maximum instantaneous forward voltage (per leg) 0.72 0.78 11 10 10 50 50 thermal characteristics thermal resistance, junction - case (per leg) r jc 0.25 0.25 c/w t j = 100 c 10 10 -55 to 150 -55 to 150 100 80 -55 to 150 MBRTA800100(r ) 11 mbrta80080(r ) 0.25 t j = 150 c 0.25 0.84 0.84 50 electrical characteristics, at tj = 25 c, unless otherwise specified reverse current at rated dc blocking voltage (per leg) i r t j = 25 c i fm = 400 a, t j = 25 c conditions -55 to 150 v f 50 ma v t c = 100 c 800 800 6000 6000 a peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine 6000 6000 www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
mbrta80045 thru MBRTA800100r www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mbrta80045 thru MBRTA800100r www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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